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The Schottky barrier Diode

This Schottky diode tutorial is split into several pages:

[1] Schottky diode tutorial
[2] Schottky diode technology & structure
[3] Schottky diode characteristics & specs
[4] Schottky diode power rectifier
See also: Other types of diodes

The Schottky diode or Schottky Barrier diode is an electronics component that is widely used for radio frequency (RF) applications as a mixer or detector diode.

The Schottky diode is also used in power applications as a rectifier, again because of its low forward voltage drop leading to lower levels of power loss compared to ordinary PN junction diodes.

Although normally called the Schottky diode these days, named after Schottky, it is also sometimes referred to as the surface barrier diode, hot carrier diode or even hot electron diode.

Schottky barrier diode history

Despite the fact that Schottky barrier diodes have many applications in today's high tech electronics scene, it is actually one of the oldest semiconductor devices in existence. As a metal-semiconductor devices, its applications can be traced back to before 1900 where crystal detectors, cat's whisker detectors and the like were all effectively Schottky barrier diodes.

Schottky diode symbol

The Schottky diode symbol used in many circuit schematic diagrams may be that of an ordinary diode symbol. However it is often necessary to use a specific Schottky diode symbol to signify that a Schottky diode rather than another one must be used because it is essential to the operation of the circuit. Accordingly a specific Schottky diode symbol has been accepted for use. This Schottky diode symbol is shown below:

Schottky diode symbol

Schottky diode advantages

Schottky diodes are used in many applications where other types of diode will not perform as well. They offer a number of advantages:

• Low turn on voltage
• Fast recovery time
• Low junction capacitance

Applications

The Schottky barrier diodes are widely used in the electronics industry finding many uses as diode rectifier. Its unique properties enable it to be used in a number of applications where other diodes would not be able to provide the same level of performance. In particular it is used in areas including:

• RF mixer and detector diode:   The Schottky diode has come into its own for radio frequency applications because of its high switching speed and high frequency capability. In view of this Schottky barrier diodes are used in many high performance diode ring mixers. In addition to this their low turn on voltage and high frequency capability and low capacitance make them ideal as RF detectors.
• Power rectifier:   Schottky barrier diodes are also used in high power applications, as rectifiers. Their high current density and low forward voltage drop mean that less power is wasted than if ordinary PN junction diodes were used. This increase in efficiency means that less heat has to be dissipated, and smaller heat sinks may be able to be incorporated in the design.
• Power OR circuits:   Schottky diodes can be used in applications where a load is driven by two separate power supplies. One example may be a mains power supply and a battery supply. In these instances it is necessary that the power from one supply does not enter the other. This can be achieved using diodes. However it is important that any voltage drop across the diodes is minimised to ensure maximum efficiency. As in many other applications, the Schottky diode is ideal for this in view of its low forward voltage drop.
  
  Schottky diodes tend to have a high reverse leakage current. This can lead to problems with any sensing circuits that may be in use. Leakage paths into high impedance circuits can give rise to false readings. This must therefore be accommodated in the circuit design.
• Solar cell applications:   Solar cells are typically connected to rechargeable batteries, often lead acid batteries because power may be required 24 hours a day and the Sun is not always available. Solar cells do not like the reverse charge applied and therefore a diode is required in series with the solar cells. Any voltage drop will result in a reduction in efficiency and therefore a low voltage drop diode is needed. As in other applications, the low voltage drop of the Schottky diode is particularly useful, and as a result Schottky diodes are normally used in this application.
• Clamp diode - especially with its use in LS TTL:   Schottky barrier diodes may also be used as a clamp diode in a transistor circuit to speed the operation when used as a switch. They were used in this role in the 74LS (low power Schottky) and 74S (Schottky) families of logic circuits. Schottky barrier diodes are inserted between the collector and base of the driver transistor to act as a clamp. To produce a low or logic "0" output the transistor is driven hard on, and in this situation the base collector junction in the diode is forward biased. When the Schottky diode is present this takes most of the current and allows the turn off time of the transistor to be greatly reduced, thereby improving the speed of the circuit.
  
  
  An NPN transistor with Schottky diode clamp
  
  
  Although it may appear a rather straightforward form of component when compared to others, Schottky diode technology has much to offer. The Schottky diode structure while appearing straightforward is able to offer performance that no other form of diode can provide.
  As a result, Schottky diode technology has developed to enable it to be used in areas that would otherwise not have been possible.
  
  

  Basic Schottky diode structure

  The Schottky barrier diode can be manufactured in a variety of forms. The most simple is the point contact diode where a metal wire is pressed against a clean semiconductor surface. This was how the early Cat's Whisker detectors were made, and they were found to be very unreliable, requiring frequent repositioning of the wire to ensure satisfactory operation. In fact the diode that is formed may either be a Schottky barrier diode or a standard PN junction dependent upon the way in which the wire and semiconductor meet and the resulting forming process.
  
  Point contact Schottky diode
  
  

  Vacuum deposited Schottky diode structure

  Although point contact diodes were manufactured many years later, these diodes were also unreliable and they were subsequently replaced by a technique in which metal was vacuum deposited.
  
  Deposited metal Schottky barrier diode
  
  

  Schottky diode structure with guard ring

  One of the problems with the simple deposited metal diode is that breakdown effects are noticed around the edge of the metalised area. This arises from the high electric fields that are present around the edge of the plate. Leakage effects are also noticed.
  To overcome these problems a guard ring of P+ semiconductor fabricated using a diffusion process is used along with an oxide layer around the edge. In some instances metallic silicides may be used in place of the metal.
  The guard ring in this form of Schottky diode structure operates by driving this region into avalanche breakdown before the Schottky junction is damaged by large levels of reverse current flow during transient events.
  
  Schottky diode rectifier structure showing with guard ring
  This form of Scottky diode structure is used in many forms of Schottky, but particularly in rectifier diodes where the voltages may be high and breakdown could be more of a problem.
  
  

  Schottky diode structure notes

  There are a number of points of interest from the fabrication process. The most critical element in the manufacturing process is to ensure a clean surface for an intimate contact of the metal with the semiconductor surface, and this is achieved chemically. The metal is normally deposited in a vacuum either by the use of evaporation or sputtering techniques. However in some instances chemical deposition is gaining some favour, and actual plating has been used although it is not generally controllable to the degree required.
  When silicides are to be used instead of a pure metal contact, this is normally achieved by depositing the metal and then heat treating to give the silicide. This process has the advantage that the reaction uses the surface silicon, and the actual junction propagates below the surface, where the silicon will not have been exposed to any contaminants. A further advantage of the whole Schottky structure is that it can be fabricated using relatively low temperature techniques, and does not generally need the high temperature steps needed in impurity diffusion.
  
  
  The Schottky diode is a very useful form of diode. It is widely used within electronics circuits because it has some particularly useful characteristics.
  The Schottky diode characteristics mean that it can be used where other forms of diode do not perform so successfully.
  
  

  Schottky diode characteristics

  The Schottky diode is what is called a majority carrier device. This gives it tremendous advantages in terms of speed because it does not rely on holes or electrons recombining when they enter the opposite type of region as in the case of a conventional diode. By making the devices small the normal RC type time constants can be reduced, making these diodes an order of magnitude faster than the conventional PN diodes. This factor is the prime reason why they are so popular in radio frequency applications.
  The diode also has a much higher current density than an ordinary PN junction. This means that forward voltage drops are lower making the diode ideal for use in power rectification applications.
  Its main drawback is found in the level of its reverse current which is relatively high. For many uses this may not be a problem, but it is a factor which is worth watching when using it in more exacting applications.
  The overall I-V characteristic is shown below. It can be seen that the Schottky diode has the typical forward semiconductor diode characteristic, but with a much lower turn on voltage. At high current levels it levels off and is limited by the series resistance or the maximum level of current injection. In the reverse direction breakdown occurs above a certain level. The mechanism is similar to the impact ionisation breakdown in a PN junction.
  
  
  The Schottky diode finds many uses as a high voltage or power rectifier. The Schottky diode rectifier has many advantages over other types of diode and as a such can be utilised to advantage.
  The Schottky diode has been used as a rectifier for many years in the power supply industry where its use is essential to many designs.
  
  

  Advantages of using a Schottky diode rectifier

  The Schottky diode rectifier offers many advantages in power rectifier and power supply circuits. There are a number of aspects of the Schottky diode rectifier that makes them ideal components in many power supply applications:
  • Low forward voltage drop:   The low forward voltage drop offered by Scottky diode power rectifiers is a significant advantage in many applications. It reduces the power losses normally incurred in the rectifier and other diodes used within the power supply. With standard silicon diodes offering the main alternative, their turn on voltage is around 0.6 to 0.7 volts. With Schottky diode rectifiers having a turn on voltage of around 0.2 to 0.3 volts, there is a significant power saving to be gained. However it is necessary to remember that there will also be losses introduced by the resistance of the material, and the voltage drop across the diode will increase with current. The losses of the Schottky diode rectifier will be less than that of the equivalent silicon rectifier.
  • Fast switching speeds:   The very fast switch speeds of the Schottky diode rectifier mean that this diode lends itself to use in switching regulator circuits.
  
  

  Schottky diode rectifier design considerations

  Schottky diode rectifiers offer many advantages, but when they are used, there are a number of design considerations to account for. These should be acknowledged in the circuit design being undertaken.
  Some of the points to be taken into account include the following:
  • High reverse leakage current:   Schottky diode rectifiers have a much higher reverse leakage current than standard PN junction silicon diodes. Although this may not be a problem in some designs it may have an impact on others.
  • Limited junction temperature:   The maximum junction temperature of a Schottky diode rectifier is normally limited to the range 125°C to 175°C but check the manufacturers ratings for the given component. This compares to temperatures of around 200°C for silicon diode rectifiers.
  • Limited reverse voltage:   As a result of its structure, Schottky diode rectifiers have a limited reverse voltage capability. The maximum figures are normally around 100 volts. If devices were manufactured with figures above this, it would be found that the forward voltages would rise and be equal to or greater than their equivalent silicon diodes for reasonable levels of current.